Program download version(PDF: 86 KB) Thursday, November 6 10:00-10:30 Registration Start 10:30-11:05 Welcome and Plenary Session Chairpersons: A. Morino/Selete, T. Arikado/Selete 10:30-10:40 A. Morino/Selete Opening Remark 10:40-11:05 T. Nishitani/NEC Keynote Speech 11:05-12:15 High-K 1 Chairperson: A. Toriumi/Univ.of Tokyo 11:05-11:40 J. C. Lee/Univ. of Texas Invited Speech: Hf-based High-k Dielectrics 11:40-12:15 S. De Gendt/IMEC Invited Speech: Implementation of High-k Gate Dielectrics - a Status Update 12:15-13:30 Lunch 13:30-15:00 Poster Session HK-1 K. Yamabe/Univ. of Tsukuba Degradation of Dielectric Characteristics of Underlying Ultrathin SiO2 Films by Al Adsorption in High Vacuum HK-2 T. Sasaki/Selete The Influence of Silicon Nitride Cap on NBTI and Fermi Pinning in HfO2 Gate Stacks HK-3 Y. Xuan/MIRAI Vapor-Liquid Hybrid Deposition (VALID) of Hafnium Silicate Films Using Hf(OtC4H9)4 and Si(OC2H5)4 Precursors HK-4 S. Ohmi/Tokyo Inst. of Technology Electrical Characteristics of Rare-Earth Oxide Stacked-Layer Structures HK-5 T. Kawahara/Selete Effects of Hf Sources, Oxidizing Agents, and NH3 Radicals on Properties of HfAlOx Films Prepared by Atomic Layer Deposition HK-6 K. Shiraishi/Univ. of Tsukuba Charge State Dependent Point Defect in High-k Dielectric HfO2 HK-7 Y. Aoki/RIKEN Solution-Based Fabrication of High-k Gate Dielectrics HK-8 S. Kamiyama/Selete Improvement in the Uniformity and the Thermal Stability of Hf-silicate Gate Dielectric by Plasma-Nitridation HK-9 S. Bhattacharya /The Queen's Univ. of Belfast, UK Gate Dielectrics on Strained-Ge Layers on Si1-xGex/Si Virtual Substrates TO-1 V. P. Gopinath/LSI Logic Method of Increasing Gate Nitridation and its Impact on CMOS Devices TO-2 C.-H. Chien/NNDL, Taiwan Nitrogen-Related Enhanced Reliability Degradation in nMOSFETs with 1.6nm Gate Dielectric TO-3 M. Inoue/Resesas Ultra-Thin SiN Gate Dielectric Fabricated by N2 Plasma Direct Nitridation FE-1 V. S. Kaushik/International SEMATECH/IMEC Effects of Interaction between HfO2 and Poly-Si on MOSCAP and MESFET Electrical Behavior FE-2 A. Muto/Selete Improved Performance of FETs with HfAlOx Gate Dielectrics Using Optimized Poly-SiGe Gate Electrodes RE-1 G. Lucovsky/NCSU Self-Organized Si Suboxide (SiOx,x<2) Interfacial Layers-Optimization of Performance and Reliability in Advanced Devices RE-2 H.-C. Lin/NNDL, Taiwan Impacts of Hole Trapping on the NBTI Degradation and Recovery in PMOS Devices MO-1 G. Lucovsky/NCSU Resonant Tunneling in Stacked Dielectrics: a Novel Approach for Obtaining the Electron Tunneling Mass-Conduction Band Offset Energy Products for Advanced Gate Dielectrics MO-2 Tatsuo Shimizu/Toshiba Proposal of Quantum Well Gate Insulating (QWGI) Structures for Band Offset Engineering from First-Principles Calculations ME-1 Takashi Shimizu/AIST Ru Gate Electrode for a La-oxide Gate Insulator Deposited by Metalorganic Chemical Vapor Deposition ME-2 Y. Akasaka/Selete A Study on the Vth Shift of HfAlOx MISFETs with n+/p+ Poly-Si and TiN Gate Electrodes Fabricated by Replacement Gate Process ME-3 N. Yoshii/Osaka Univ. Energy Barrier Heights of Ultra-thin Silicon Dioxide Films with Different Metal Gates OA-1 K.M.A. Salam/Muroran Inst. of Technology Properties of Tantalum Silicate Thin Films Prepared by Metalorganic Decomposition 15:00-16:15 High-K 2 Chairperson: T. Yasuda/AIST 15:00-15:35 K. Kukli/Univ. of Helsinki Invited Speech: Atomic Layer Deposition Chemistry, Mechanisms and Related Physical Properties of High Permittivity Dielectric Oxides 15:35-15:55 G. Locovsky/NCSU Separate and Independent Control of Interfacial Band Alignments and Dielectric Constants in Complex Rare-Earth/Transition Metal (Re/Tm) Oxide 15:55-16:15 A. Uedono/Univ. of Tsukuba Study of Defects in MOS Structure Using HfAlOx Gate Dielectric by Means of Positron Annihilation 16:15-16:30 Break 16:30-18:00 High-K/FET Chairperson: T. Mogami/NEC 16:30-17.05 R. Chau/Intel Invited Speech: Gate Dielectric Scaling for High-Performance CMOS: from SiO2 to High-k 17:05-17:40 H. Niimi/Texas Instruments Invited Speech: Electrical and Physical Properties of Poly-Si Gated HfSiON Gate Dielectrics 17:40-18:00 M. Takayanagi /Toshiba Invited Speech: HfSiON Gate Dielectrics for CMOS Applications 18:00-20:00 Reception Friday, November 7 10:00-11:50 Thin SiON Chairpersons: S. Kimura/Hitachi, H. Watanabe/NEC 10:00-10:35 Q. Xiang/AMD Invited Speech: Extending the Life of N/O Stack Gate Dielectric with Gate Electrode Engineering 10:35-11:10 J. Yugami/Renesas Invited Speech: Advanced Oxynitride Gate Dielectrics for CMOS Applications 11:10-11:30 T. Kawae/Tohoku Univ. Drastically Improved NBTI Lifetime by Periodic Plasma Nitridation for 90nm Mobile Applications at Low Voltage Operation 11:30-11:50 R. Mitsuhashi/Selete Improvement in Thermal Stability of the Interfacial Layer for Poly-Si/HfAlOx Gate Stacks 11:50-13:20 Lunch 13:20-14:35 Modeling: Carrier Mobility Chairperson: S. Takagi/AIST, Univ. of Tokyo 13:20-13:55 M. V. Fischetti/IBM Invited Speech: Reduced Electron Mobility in High-k MOSFETs Due to Insulator Optical Phonons: Density, Temperature and Material Dependence 13:55-14:15 H. Ota/MIRAI Comparative Study of Carrier Mobility and Threshold Voltage between N- and P-MOSFETs in TaN Gate CMOS with EOT=1.5-2nm HfAlOx 14:15-14:35 M. Ono/Toshiba Dependence of Electron Mobility by Remote Coulomb Scattering on Dielectric Constant Distribution in Stacked Gate Dielectrics 14:35-14:45 Break 14:45-16:20 High-K 3 Chairperson: K. Shiraishi/Univ. of Tsukuba, Y. Akasaka/Selete 14:45-15:20 M. I. Gardner /International SEMATECH/AMD EOT Scaling and Device Issues for High-k Gate Dielectrics 15:20-15:40 T. Aoyama/Selete In-situ HfSiON/SiO2 Gate Dielectric Fabrication Using Hot Wall Batch System 15:40-16:00 T. Nishimura/MIRAI Effects of Nitrogen Incorporation into HfAlOx Films on Gate Leakage Current - From XPS Study of Hf Bonding States 16:00-16:20 K. Kita/Univ. of Tokyo Further EOT Scaling of Ge/HfO2 over Si/HfO2 Systems 16:20-16:30 Break 16:30-18:30 Panel Discussion Development Strategy of Gate Dielectrics: Ultra-thin Oxynitride versus High-k Materials Organizers H. Iwai/Tokyo Inst. of Technology M. Hiratani/Hitachi, T. I. Tech. M. Takayanagi/Toshiba H. Kitajima/Selete Moderator H. Iwai/Tokyo Inst. of Technology Panelists Ho-Kyu Kang/Samsung T. Horikawa/AIST(MIRAI) K. Torii/Selete Y. Tsunashima/Toshiba J. Yugami/Renesas S. De Gendt/IMEC H. Niimi/Texas Instruments M. V. Fischetti/IBM R. Chau/Intel 18:30-18:35 Closing Remark 18:30-18:35 F. Ootsuka/Selete Closing Remark Copies of IWGI 2003 Extended Abstract can be purchased with CD-ROMs at 7,000 Japanese Yen from: <Inside Japan> Business Center for Academic Societies Japan 5-16-9 Honkomagome, Bunkyo-ku, Tokyo 113-8622, Japan http://www.bcasj.or.jp/ <Outside Japan> IEEE Service Center Single Publication Sales Unit 445 Hoes Lane, Piscataway, NJ 08854, USA http://www.ieee.org/ JSAP Catalog NO: AP031237 IEEE Catalog NO: 03EX765(Print Version) IEEE Catalog NO: 03EX765C(CD-ROM Version) ISBN: 4-89114-037-2(Print Version) ISBN: 4-89114-038-0(CD-ROM Version)