IWGI IWGI 2003
IWGI2003 Invitation
Organization
Program

Welcome Address
    from IWGI 2003 Chairs:

  On behalf of the IWGI committee, we would like to welcome you to the 2003 International Workshop on Gate Insulator. This year the workshop is held in Miraican Hall, Tokyo, and succeeds the concept of IWGI which covers high-k and ultra-thin gate dielectrics. The International Workshop on Gate Insulator (IWGI) was established in 2001 with the intention of extending the concepts and ideas promulgated by the International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTFFUDST) held in 1999, but was more focused on high-k gate insulator studies. IWGI 2003 builds upon the concepts underlying WGI 2001 and is aimed at offering engineers and scientists from all over the world an opportunity to get together in the Asia/Pacific region to exchange their opinions and experiences regarding the progress of gate insulator technologies. The 2003 meeting specially focuses on high-k and/or ultra-thin oxynitride gate insulator technologies and their applications.

  The 2003 meeting consists of 10 single sessions with 42 technical papers including 11 invited papers, 9 oral contributed papers, and 22 poster papers. In addition, the panel discussion tilted "Development strategy of gate dielectrics: Ultra-thin oxyniride versus high-k materials" is scheduled at the final part of the workshop.

  On behalf of the Steering Committee, the Executive Committee, and the Program Committee, we would like to thank all the authors and participants for their great contribution to the success of the workshop. We hope that the workshop will provide each participant with the valuable information that is useful for the progress of the gate insulator technologies.

  Finally, we would like to express our sincere gratitude to the committee members for their contribution in planning and organizing the 2003 meeting, and to the sponsors and organizations in cooperation for their great support to this workshop.


November 6, 2003
Akihiko Morino, Steering Committee Chair
Tsunetoshi Arikado, Executive Committee Chair
Fumio Ootsuka, Program Committee Chair


Sponsored by:
JSAP

JSAP: The Japan Society of Applied Physics

JSAP Thin Films and SurfacePhysics Division

JSAP Silicon Technology Division


Cosponsored by:
JEITA
JEITA: Japan Electronics and Information Technology Industries Association

Technically cosponsored by:
EDS
IEEE Electron Devices Society

Sematech
International SEMATECH

Sematech
ECS Electronics Division